Semiconductor device having super junction structure and method for manufacturing the same

ABSTRACT

A semiconductor device having a super junction structure includes: multiple first columns extending in a current flowing direction; and multiple second columns extending in the current flowing direction. The first and second columns are alternately arranged in an alternating direction. Each first column provides a drift layer. The first and second columns have a boundary therebetween, from which a depletion layer expands in case of an off-state. At least one of the first columns and the second columns have an impurity dose, which is inhomogeneous by location with respect to the alternating direction.

CROSS REFERENCE TO RELATED APPLICATION

This application is based on Japanese Patent Applications No. 2006-23145filed on Jan. 31, 2006, No. 2006-63833 filed on Mar. 9, 2006 and No.2006-328397 filed on Dec. 5, 2006, the disclosures of which areincorporated herein by reference.

FIELD OF THE INVENTION

The present invention relates to a semiconductor device having superjunction structure and a method for manufacturing a semiconductor devicehaving super junction structure.

BACKGROUND OF THE INVENTION

A substrate of super junction MOSFET is constructed by repeatedlyarranging a PN column pair of one kind in a transistor forming area asdisclosed in, for example, JP-A-2004-146689. As its result, incomparison with a conventional MOSFET, it is possible to reduceon-resistance by a reduction in drift resistance and perform high speedswitching.

Although the high speed switching can be performed, an electric currentbetween a drain and a source is suddenly interrupted at a switching timefrom an on-state to an off-state. Thus, the voltage between the drainand the source is greatly jumped up so that problems such as adegradation in breakdown robustness amount, radio noise generation, etc.are caused.

Further, a MOSFET having a super junction structure is disclosed in, forexample, US Patent Application Publication No. 2005-0035401. The superjunction structure is constructed by alternately arranging an N typeimpurity area and a P type impurity area constituting a PN column pair.In comparison with a conventional MOSFET, it is possible to reduceon-resistance by a reduction of drift resistance and perform high speedswitching.

However, in the super junction MOSFET, the PN column pair is instantlydepleted. Therefore, in comparison with the conventional MOSFET,although the high speed switching can be performed at high voltageoperation, an electric current between a drain and a source is suddenlyinterrupted at a switching time from an on-state to an off-state.Therefore, the voltage between the drain and the source is greatlyjumped up, and problems such as radio noise generation, a degradation inbreakdown robustness amount, deterioration of recovery characteristics,etc. are caused.

Thus, it is required for a semiconductor device to restrain thejumping-up of the voltage at the switching time from an on-state to anoff-state.

SUMMARY OF THE INVENTION

In view of the above-described problem, it is an object of the presentdisclosure to provide a semiconductor device having a super junctionstructure. It is another object of the present disclosure to provide amethod for manufacturing a semiconductor device having a super junctionstructure.

According to a first aspect of the present disclosure, a semiconductordevice having a super junction structure includes: a plurality of firstcolumns having a first conductive type and extending in a currentflowing direction; and a plurality of second columns having a secondconductive type and extending in the current flowing direction. Thefirst columns and the second columns are alternately arranged in analternating direction perpendicular to the current flowing direction sothat the super junction structure is provided. Each first columnprovides a drift layer in case of an on-state for flowing a currenttherethrough. The first columns and the second columns have a boundarybetween the first column and the second column, from which a depletionlayer expands in case of an off-state. At least one of the first columnsand the second columns have an impurity dose, which is inhomogeneous bylocation with respect to the alternating direction.

When the device switches from the on-state to the off-state, a timing ofcomplete depleting the first and second columns deviates by locationwith respect to the alternating direction. Thus, voltage jump is reducedwhen the device switches to the off-state.

According to a second aspect of the present disclosure, a semiconductordevice having a super junction structure includes: a plurality of firstcolumns having a first conductive type and extending in a currentflowing direction; and a plurality of second columns having a secondconductive type and extending in the current flowing direction. Thefirst columns and the second columns are alternately arranged in analternating direction perpendicular to the current flowing direction sothat the super junction structure is provided. Each first columnprovides a drift layer in case of an on-state for flowing a currenttherein. The first columns and the second columns have a boundarybetween the first column and the second column, from which a depletionlayer expands in case of an off-state. At least one of the first columnsand the second columns have an impurity dose, which is inhomogeneous bylocation with respect to the current flowing direction.

When the device switches from the on-state to the off-state, a timing ofcomplete depleting the first and second columns deviates by locationwith respect to the current flowing direction. Thus, voltage jump isreduced when the device switches to the off-state.

According to a third aspect of the present disclosure, a method formanufacturing a semiconductor device having a super junction structureincludes: preparing a semiconductor substrate having a first conductivetype; forming a plurality of trenches in the substrate, wherein eachtrench has a constant width along with a first direction, and wherein adistance between neighboring two trenches along with the first directionincludes at least a first distance and a second distance; forming anepitaxial film having a second conductive type on the substrate so thatthe trenches are filled with the epitaxial film; and flattening one sideof the substrate, on which the epitaxial film is formed.

The above method provides the semiconductor device, in which voltagejump is reduced when the device switches to the off-state.

According to a fourth aspect of the present disclosure, a semiconductordevice having a super junction structure includes: a plurality of firstcolumns having a first conductive type and extending in a currentflowing direction; and a plurality of second columns having a secondconductive type and extending in the current flowing direction. Thefirst columns and the second columns are alternately arranged in analternating direction perpendicular to the current flowing direction sothat the super junction structure is provided. Each first columnprovides a drift layer in case of an on-state for flowing a currenttherethrough. The first columns and the second columns have a boundarybetween the first column and the second column, from which a depletionlayer expands in case of an off-state. Each of the first columns and thesecond columns have a stripe planar pattern on a plane perpendicular tothe current flowing direction. At least one of the first columns and thesecond columns have a bridge portion, which connects one first or secondcolumn and a neighboring first or second column.

When the device switches from the on-state to the off-state, a timing ofcomplete depleting the first and second columns deviates by location.Thus, voltage jump is reduced when the device switches to the off-state.

According to a fifth aspect of the present disclosure, a method formanufacturing a semiconductor device having a super junction structureincludes: preparing a semiconductor substrate having a first conductivetype; forming a plurality of trenches in the substrate, wherein eachtrench has a constant width along with a first direction, wherein thetrenches have a constant distance between neighboring two trenches alongwith the first direction, and wherein each trench extends intermittentlyin a second direction, which is perpendicular to the first direction;and forming an epitaxial film having a second conductive type on thesubstrate so that the trenches are filled with the epitaxial film.

The above method provides the semiconductor device, in which voltagejump is reduced when the device switches to the off-state. Further,since the trenches have the constant distance between neighboring twotrenches, and each trench extends intermittently in the seconddirection, a trench wall is prevented from inclining.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other objects, features and advantages of the presentinvention will become more apparent from the following detaileddescription made with reference to the accompanying drawings. In thedrawings:

FIG. 1 is a cross sectional view showing a semiconductor deviceaccording to a first embodiment mode;

FIG. 2 is a partially enlarged cross sectional view showing a superjunction structure in the device shown in FIG. 1;

FIG. 3 is a graph showing a voltage waveform and a current waveform inthe device shown in FIG. 1 in case of switching;

FIG. 4 is a cross sectional view showing a semiconductor deviceaccording to a second embodiment mode;

FIG. 5 is a partially enlarged cross sectional view showing a superjunction structure in the device shown in FIG. 4;

FIG. 6 is a cross sectional view showing a semiconductor deviceaccording to a third embodiment mode;

FIG. 7 is a partially enlarged cross sectional view showing a superjunction structure in the device shown in FIG. 6;

FIGS. 8-11 are cross sectional views explaining a method formanufacturing the semiconductor device shown in FIG. 6;

FIG. 12 is a cross sectional view explaining another method formanufacturing the semiconductor device shown in FIG. 6;

FIG. 13 is a partially enlarged cross sectional view showing a superjunction structure in a semiconductor device according to a fourthembodiment mode;

FIG. 14 is a partially enlarged cross sectional view showing a depletionlayer in the super junction structure in FIG. 13;

FIG. 15 is a partially enlarged cross sectional view showing a superjunction structure in a semiconductor device according to a modificationof the fourth embodiment mode;

FIG. 16 is a cross sectional view showing another semiconductor deviceaccording to a first modification of the third embodiment mode;

FIG. 17 is a perspective view showing further another semiconductordevice according to a second modification of the third embodiment mode;

FIG. 18 is a graph showing a relationship between a deviation ofimpurity surface concentration and a breakdown voltage;

FIG. 19 is a cross sectional view showing a semiconductor device as acomparison of the first embodiment mode;

FIGS. 20-22 are partially enlarged cross sectional views showing adepletion layer in the device shown in FIG. 19;

FIG. 23 is a graph showing a voltage waveform and a current waveform ofthe device shown in FIG. 19 in case of switching;

FIG. 24 is a cross sectional view showing a semiconductor deviceaccording to a fifth embodiment mode;

FIG. 25 is a cross sectional view showing the device taken along lineXXV-XXV in FIG. 24;

FIGS. 26A and 26B are cross sectional views showing a depletion layer inthe device shown in FIG. 25;

FIGS. 27A and 27B are cross sectional views showing a depletion layer ina semiconductor device having no bridge portion as a comparison of thefifth embodiment mode;

FIGS. 28-29 and 31-32 are cross sectional views explaining a method formanufacturing the device shown in FIG. 25;

FIG. 30 is a perspective view explaining the method for manufacturingthe device shown in FIG. 25;

FIG. 33 is a cross sectional view showing a semiconductor deviceaccording to a sixth embodiment mode; and

FIG. 34 is a perspective view showing the semiconductor device having nobridge portion as a comparison of the fifth embodiment mode.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS First Embodiment Mode)

A first embodiment mode for embodying the present invention will next beexplained in accordance with the drawings.

FIG. 1 is a longitudinal sectional view of a semiconductor device inthis embodiment mode. This semiconductor device is a vertical typeMOSFET, and an electric current is flowed in a longitudinal direction.Namely, the longitudinal direction is a flowing direction of theelectric current, and a transversal direction is a directionperpendicular to the flowing direction of the electric current.

A silicon layer 2 is formed on an N⁺ silicon substrate 1, and an N typesilicon layer 3 is formed on the silicon layer 2. A semiconductorsubstrate is constructed by this laminating layer structural body. Inthe silicon layer 2 in the semiconductor substrate, an impurity area (Ncolumn) 4 of N type extending in the longitudinal direction, and animpurity area (P column) 5 of P type similarly extending in thelongitudinal direction are arranged adjacently and alternately in thetransversal direction. A column pair (PN column pair) is constructedfrom the impurity area 4 of N type and the impurity area 5 of P type.Thus, a super junction structure is formed. At an on-state time, the Ntype impurity area 4 in the PN column pair becomes a drift layer and theelectric current is flowed. At an off-state time, a depletion layer isspread from an interface of the N type impurity area 4 and the P typeimpurity area 5.

In the above N type silicon layer 3, a channel forming area 6 of P typeis formed so as to reach the impurity area 5 of P type. An N type sourcearea 7 is formed in a surface layer portion within the channel formingarea 6 of P type. In a part for exposing the channel forming area 6 of Ptype on an upper face of the N type silicon layer 3, a gate electrode 9is formed through a gate oxide film 8 as a gate insulating film. Thegate electrode 9 is covered with a silicon oxide film 10. A sourceelectrode 11 is formed on the upper face of the N type silicon layer 3.This source electrode 11 is electrically connected to the source area 7and the channel forming area 6. A drain electrode 12 is formed on alower face (rear face) of the N⁺ silicon substrate 1.

The transistor is turned on by applying a positive electric potential tothe gate electrode 9 in a state in which the source electrode 11 is setto a ground electric potential and a positive electric potential isapplied to the drain electrode 12. At a transistor on-state time, asshown in FIG. 1, the electric current is flowed from the drain electrode12 to the source electrode 11 through the N⁺ silicon substrate 1, the Ntype impurity area 4, an N type area (3), a part (inverting layer)opposed to the gate electrode 9 in the channel forming area 6, and thesource area 7.

On the other hand, the transistor is turned off when the gate electrode9 is set to a ground electric potential from the transistor on-state (astate in which the source electrode 11 is set to a ground electricpotential and the drain electrode 12 is set to a positive electricpotential and the gate electrode 9 is set to a positive electricpotential). As shown in FIG. 2, the depletion layer is spread from theinterface of the N type impurity area 4 and the P type impurity area 5.

Here, in this embodiment mode, an impurity dose in the transversaldirection of the PN column pair in an active area (transistor formingarea) of the transistor in the semiconductor substrate is ununiformed inaccordance with places. Namely, the total amount (dose) of impurities ofboth areas 4, 5 in the transversal direction is differently set inaccordance with places. Concretely, in FIG. 1, the width W4 of each Ntype impurity area 4 is constantly set, and the width W5 of each P typeimpurity area 5 is also constantly set. The impurity concentration ofthe N type impurity area 4 is set to three kinds of N1, N2, N3, and theimpurity concentration of the P type impurity area 5 is set to threekinds of P1, P2, P3.

Thus, the width W4 of each N type impurity area 4 is equally set, andthe width W5 of each P type impurity area 5 is equally set. Further, theimpurity concentration of the N type impurity area 4 and the impurityconcentration of the P type impurity area 5 are differently set inaccordance with places in the transversal direction. Thus, the impuritydose of the PN column pair in the transversal direction is ununiformedin accordance with places.

Thus, as shown in FIG. 2, a spread speed of the depletion layer shown bya broken line within this figure is different (the spread speed is fastas concentration is low) in accordance with a difference in impurityconcentration, and a balance of the impurity doses of P type and N typeis different in accordance with places. Therefore, timing for perfectlydepleting the PN column pair is shift within a face (transversaldirection), and it is prevented that all PN columns are simultaneouslyturned off. As its result, as shown in FIG. 3, a changing ratio (dl/dt)with respect to an electric current Ids between the drain and the sourceat a switching time from an on-state to an off-state is reduced, andjumping-up of a voltage Vds between the drain and the source at theswitching time from an on-state to an off-state can be deterred.

FIG. 19 is a longitudinal sectional view in a super junction MOSFET forcomparison. In FIG. 19, a PN column pair of one kind constructed by onlyan N type impurity area (N column) 4 of impurity concentration N1, and aP type impurity area (P column) 5 of impurity concentration P1 isarranged in an active area (transistor forming area). A super junctionstructure is constructed by the PN column pair of the same construction(N1 and P1) irrespective of places. At the switching time from anon-state of the transistor to an off-state (switching-off time), asshown in FIG. 20, depletion formation is similarly advanced in eachcolumn pair after the depletion formation is started. As shown in FIG.21, the depletion formation is similarly further advanced in each columnpair. As shown in FIG. 22, the depletion formation is simultaneouslycompleted in each column pair. In this operation, as shown in FIG. 23,at the switching time from an on-state to an off-state, the changingratio (dl/dt) with respect to the electric current Ids between the drainand the source is large, and jumping-up of the voltage Vds between thedrain and the source is generated.

In contrast to this, in this embodiment mode, the super junctionstructure is constructed from the N type impurity area (N column) 4 ofN1, N2, N3 in impurity concentration, and the P type impurity area (Pcolumn) 5 of P1, P2, P3 in impurity concentration. Therefore, the superjunction structure is constructed by PN column pairs of two kinds ormore. Thus, plural kinds of combinations of adjacent PN column pairs canbe formed, and the balance of impurity doses of P type and N type isdifferent in accordance with places in the active area (transistorforming area). Thus, at the switching time (switching-off time) from anon-state of the transistor to an off-state, timing for perfectlydepleting the PN column pair can be shifted within a transistor formingface (transversal direction). Therefore, it is prevented that alltransistor cells are simultaneously turned off. Thus, as shown in FIG.3, it is possible to deter the jumping-up of the voltage Vds between thedrain and the source at the switching time from an on-state to anoff-state. Namely, the timing of the perfect depletion formation isshifted in the active area by using the PN column pairs of two kinds ormore different in impurity dose. Thus, the changing ratio (dl/dt) withrespect to the electric current Ids between the drain and the source isreduced, and the jumping-up of the voltage Vds between the drain and thesource can be prevented.

In accordance with the above embodiment mode, the following effects canbe obtained.

In the semiconductor device (vertical type MOSFET) having the superjunction structure, the impurity dose of the column pair in thetransversal direction in the active area of the semiconductor device isununiformed in accordance with places. Accordingly, timing for perfectlydepleting the column pair (PN column pair) constructed by the N typeimpurity area 4 and the P type impurity area 5 is shifted in thetransversal direction at the switching time (switching-off time) from anon-state to an off-state. Thus, the jumping-up of the voltage at theswitching time from an on-state to an off-state can be restrained.

Further, in the general power MOSFET, gate resistance is increased torestrain a radio noise generated at the switching time so that a gateinput waveform is dulled to cope with this noise. However, generatedheat is increased, and compactness of a product is limited. Further, inthe super junction MOSFET, the jumping-up of the voltage at a perfectdepletion forming time becomes a problem. Therefore, no radio noisecountermeasure can be taken by only gate waveform control. In contrastto this, the radio noise in a super junction element can be reduced byununiforming the impurity dose of the column pair in accordance withplaces. Furthermore, this reduction can be realized without increasingthe generated heat.

Second Embodiment Mode

A second embodiment mode will next be explained with a focus on adifferent point from the first embodiment mode.

FIG. 4 is a longitudinal sectional view of a semiconductor device inthis embodiment mode instead of FIG. 1. This semiconductor device isalso a vertical MOSFET, and has the super junction structure.

The width W4 of each N type impurity area 4 is constantly set, and thewidth W5 of each P type impurity area 5 is also constantly set. Theimpurity concentration of the N type impurity area 4 is set to threekinds of N1, N2, N3, and the impurity concentration of the P typeimpurity area 5 is set to one kind of P1. Namely, FIG. 4 differs fromFIG. 1 in that the concentration of the N type impurity area (N column)4 is three kinds of N1, N2, N3, and the concentration of the P typeimpurity area (P column) 5 is one kind of P1.

Thus, the width W4 of each N type impurity area 4 is equally set, andthe width W5 of each P type impurity area 5 is equally set. Further, theimpurity concentration of each P type impurity area 5 is equally set,and the impurity concentration of the N type impurity area 4 isdifferently set in accordance with places in the transversal direction.Thus, the impurity dose in the transversal direction of the column pairis ununiformed in accordance with places.

Thus, as shown in FIG. 5, at the switching time (switching-off time)from an on-state of the transistor to an off-state, with respect to thespread of a depletion layer shown by a broken line in this figure,timing for perfectly depleting the PN column pair can be shifted withina transistor forming face (transversal direction). Therefore, thejumping-up of the voltage at the switching time from an on-state to anoff-state can be restrained.

Thus, the impurity concentration of only the N type impurity area (Ncolumn) 4 may be also changed, or the impurity concentration of only theP type impurity area (P column) 5 may be also changed.

Third Embodiment Mode

A third embodiment mode will next be explained with a focus on adifferent point from the first embodiment mode.

FIG. 6 is a longitudinal sectional view of a semiconductor device inthis embodiment mode instead of FIG. 1. This semiconductor device isalso a vertical type MOSFET, and has the super junction structure.

The impurity concentration of the N type impurity area 4 is set to onekind of N1, and the impurity concentration of the P type impurity area 5is set to one kind of P1. The width W5 of each P type impurity area 5 isconstantly set, and the width W4 of the N type impurity area 4 is set tothree kinds.

Thus, the impurity concentration of each N type impurity area 4 isequally set, and the impurity concentration of each P type impurity area5 is equally set. Further, the width W5 of each P type impurity area 5is equally set, and the width W4 of the N type impurity area 4 isdifferently set in accordance with places in the transversal direction.Thus, the impurity dose in the transversal direction of the column pairis ununiformed in accordance with places.

Thus, as shown in FIG. 7, at the switching time (switching-off time)from an on-state of the transistor to an off-state, with respect to thespread of a depletion layer shown by a broken line in this figure,timing for perfectly depleting the PN column pair can be shifted withina transistor forming face (transversal direction). Therefore, thejumping-up of the voltage at the switching time from an on-state to anoff-state can be restrained.

Next, a manufacturing method of the semiconductor substrate having thissuper junction structure will be explained.

As shown in FIG. 8, an N type silicon wafer 20 as an N typesemiconductor substrate is prepared. As shown in FIG. 9, a trench 22 isformed by performing ion etching using a mask 21 within a wafer facewith respect to this wafer 20. In forming the trench, a groove width Wtof the trench 22 is set to be uniformed (constantly set), and aremaining width Ws is set to become two kinds or more.

Thereafter, as shown in FIG. 10, an epitaxial film 23 of P type isformed on the N type silicon wafer 20, and the trench 22 is buried bythe epitaxial film 23. Thereafter, a main face side (upper face side) ofthe N type silicon wafer 20, i.e., the upper face side of the epitaxialfilm 23 is polished and flattened. This polishing is performed until thesilicon wafer 20 is exposed. Further, as shown in FIG. 11, an N typeepitaxial film 24 is formed on the upper face of the N type siliconwafer 20. A surface silicon layer of N type may be also formed byimplanting ions onto the upper face of the N type silicon wafer 20instead of the formation of the N type epitaxial film 24 on the upperface of the N type silicon wafer 20.

Further, a rear face (lower face) of the N type silicon wafer 20 ispolished until the vicinity of the trench 22, and an N⁺ siliconsubstrate is stuck to this polishing face. An N⁺ silicon layer may bealso formed on the rear face of the N type silicon wafer 20 byimplanting ions from the rear face (lower face) of the N type siliconwafer 20 instead of the polishing of the rear face of the N type siliconwafer 20 and the sticking of the N⁺ silicon substrate.

A vertical type MOSFET shown in FIG. 6 is manufactured by using thesemiconductor substrate (the semiconductor substrate having the superjunction structure) formed in this way. Namely, a P type channel formingarea 6, an N type source area 7, a gate oxide film 8, a gate electrode9, a silicon oxide film 10, a source electrode 11 and a drain electrode12 are formed. Thus, the super junction MOSFET of FIG. 6 is completed.

As another manufacturing method, as shown in FIG. 12, a PN column pairmay be also made by repeating formation of N type epitaxial films 4 a, 4b, 4 c, 4 d, 4 e and the P type impurity area 5 using the ionimplantation (and diffusion). Namely, the N type epitaxial film 4 a isformed on the N⁺ silicon substrate 1, and the P type impurity area 5 isformed in a predetermined area of this N type epitaxial film 4 a.Subsequently, the N type epitaxial film 4 b is formed on the N typeepitaxial film 4 a, and the P type impurity area 5 is formed in this Ntype epitaxial film 4 b. Thereafter, this process is repeated and the Ntype impurity area 4 and the P type impurity area 5 are extended andarranged in the longitudinal direction.

Further, the groove width Wt may be also changed instead of the changeof the remaining width Ws in FIG. 9. Namely, the remaining width Ws maybe also set to be uniformed (constantly set), and the groove width Wt ofthe trench 22 may be also set to become two kinds or more.

Fourth Embodiment Mode

Next, a fourth embodiment mode will be explained with a focus on adifferent point from the first embodiment mode.

FIG. 13 shows a PN column pair in this embodiment mode. The otherconstructions are the same as FIG. 1, and their explanations aretherefore omitted.

In the first to third embodiment modes, the dose is changed in a columnunit (impurity area unit). However, in this embodiment mode, an impuritydose difference is formed in the longitudinal direction within a column.Namely, the impurity dose of the column pair in the longitudinaldirection (the flowing direction of an electric current)

Z in the active area of the semiconductor device is ununiformed inaccordance with places (i.e., depth).

Concretely, the impurity concentration of the N type impurity area 4 isset to one kind of N1, and the impurity concentration of the P typeimpurity area 5 is set to one kind of P1. The width W4 (Z) in thelongitudinal direction Z with respect to the N type impurity area 4 iswidest in a lower end portion, and is linearly narrowed toward an upperside. The width W5 (Z) in the longitudinal direction Z with respect tothe P type impurity area 5 is narrowest in a lower end portion and islinearly widened toward an upper side.

Thus, the impurity concentration of each N type impurity area 4 isequally set, and the impurity concentration of each P type impurity area5 is equally set. Further, the width W4 in the longitudinal directionwith respect to the N type impurity area 4, and the width W5 in thelongitudinal direction with respect to the P type impurity area 5 aredifferently set in accordance with places (depth) in the longitudinaldirection. Thus, the impurity dose in the longitudinal direction of thecolumn pair is ununiformed in accordance with places.

Thus, as shown in FIG. 14, at the switching time (switching-off time)from an on-state of the transistor to an off-state, with respect to thespread of a depletion layer shown by a broken line within this figure,timing for perfectly depleting the PN column pair can be shiftedaccording to the flowing direction of an electric current. Therefore,the changing ratio of the electric current at the switching time from anon-state to an off-state is reduced, and the jumping-up of the voltagecan be restrained.

As shown in FIG. 15 instead of FIG. 13, the width in the longitudinaldirection of the N type impurity area 4 and the width in thelongitudinal direction of the P type impurity area 5 may be alsodifferently set in accordance with places (depth) in the longitudinaldirection. Further, the width (width in the transversal direction of theP type impurity area 5 in FIG. 15) in the transversal direction withrespect to areas 4, 5 may be also differently set in each of areas 4, 5(each P type impurity area 5 in FIG. 15). In FIG. 15, the width in thetransversal direction of the P type impurity area 5 is differently setin each area 5. However, the width in the transversal direction of the Ntype impurity area 4 may be also differently set in each area 4, or thewidth in the transversal direction with respect to both the N typeimpurity area 4 and the P type impurity area 5 may be also differentlyset in both respective areas 4, 5.

The above embodiment mode may be also set as follows.

An epitaxial wafer formed by laminating a silicon layer 2 of a lowimpurity concentration in a high impurity concentration siliconsubstrate 1 may be also used and a bulk substrate may be also used asthe silicon wafer in FIG. 1, etc.

Further, as a making method of the PN column (N type impurity area 4 andP type impurity area 5), the trench may be also buried by implantingions from a trench side wall after the trench formation. Further, amethod for burying an impurity doped material (e.g., oxide) within thetrench after the trench formation, and diffusing impurities by heattreatment from the impurity doped material to a trench side wall sidemay be also adopted as the making method of the PN column. Otherwise, asthe making method of the PN column, the column may be also merely madeby the ion implantation and the diffusion without forming the trench.

As a method for ununiforming the impurity dose of the column pair in adirection perpendicular to the flowing direction of the electric currentin accordance with places, at least one of the width W4 of the N typeimpurity area 4, the width W5 of the P type impurity area 5, theimpurity concentration of the N type impurity area 4 and the impurityconcentration of the P type impurity area 5 may be differently set inaccordance with places in the direction perpendicular to the flowingdirection of the electric current in a wide sense.

MOSFET of the planar type has been explained as an example, but similareffects are also obtained in a concave type and a trench type. FIG. 16shows one example in the case of a trench gate type MOSFET. In FIG. 16,an N type source area 31 is formed in a surface layer portion of a Ptype silicon layer 30. In the P type silicon layer 30, a trench 32 isformed so as to pass through the source area 31 and the P type siliconlayer 30. A gate electrode 34 is formed within the trench 32 through agate oxide film 33. The gate electrode 34 is covered with a siliconoxide film 35, and a source electrode 36 is formed thereon. Further, adrain electrode 37 is formed on a rear face of the substrate 1.

Further, the above embodiments may be also applied to a lateral MOSFET.FIG. 17 shows one example in the case of the lateral MOSFET. In FIG. 17,a P type channel forming area 41 is formed in a surface layer portion onthe upper face of an N type silicon substrate 40. An N type source area42 is formed in a surface layer portion within this channel forming area41. A gate electrode 44 is formed through a gate oxide film 43 in anexposed part of the channel forming area 41 on the upper face of thesubstrate 40. Further, an N⁺ drain area 45 is formed in a surface layerportion in a position separated from the P type channel forming area 41on the upper face of the N type silicon substrate 40. The P type channelforming area 41 and the N⁺ drain area 45 are respectively formed in aband shape, and are formed in parallel at a constant interval.

An N type impurity area 46 extending in the transversal direction (theflowing direction of an electric current) and a P type impurity area 47similarly extending in the transversal direction (the flowing directionof the electric current) are adjacently alternately arranged in asurface layer portion on the upper face of the N type silicon substrate40 between the P type channel forming area 41 and the N⁺ drain area 45.

Here, for example, the impurity concentration of each N type impurityarea 46 is equally set, and the impurity concentration of each P typeimpurity area 47 is equally set. The width W46 of each N type impurityarea 46 is equally set, and the width W47 of the P type impurity area 47is differently set in accordance with places in the transversaldirection (more particularly, in direction Y within FIG. 17). Thus, theimpurity dose in the transversal direction (more particularly, directionY within FIG. 17) of the column pair is ununiformed in accordance withplaces.

Further, the above embodiments may be also applied to IGBT and a diodein addition to MOSFET.

In the explanation made so far, the first electric conductivity type isthe N type and the second electric conductivity type is the P type.However, conversely, the first electric conductivity type may be alsothe P type, and the second electric conductivity type may be also the Ntype.

Next, optimization of the impurity dose when the impurity dose isununiformed in accordance with places will be referred.

FIG. 18 shows the relation of the impurity dose and an element withstandvoltage.

In FIG. 18, structures 1, 2 different in element structure are used, anda withstand voltage measurement is made by differently setting theimpurity dose in structures 1, 2 (e.g., the structure of FIG. 4 and thestructure of FIG. 6 are set as structures 1, 2). More concretely, forexample, the withstand voltage measurement is made in a semiconductordevice in which all portions set to three kinds of concentrations N1,N2, N3 in the structure of FIG. 4 are set to concentration N1. Thewithstand voltage measurement is made in a semiconductor device in whichall these portions are set to concentration N2. The withstand voltagemeasurement is made in a semiconductor device in which all theseportions are set to concentration N3.

Further, for example, in the structure of FIG. 6, the withstand voltagemeasurement is made in a semiconductor device in which all portions setto three kinds of widths W4 (small), W4 (middle) and W4 (large) in thestructure of FIG. 6 are set to width W4 (small). The withstand voltagemeasurement is made in a semiconductor device in which all theseportions are set to width W4 (middle). The withstand voltage measurementis made in a semiconductor device in which all these portions are set towidth W4 (large).

In FIG. 18, the element withstand voltage is reduced even when theelement withstand voltage is shifted positively and negatively, i.e., toany one of a high impurity dose side and a low impurity dose side fromthe impurity dose attaining a maximum of the element withstand voltage.Accordingly, characteristics of about left-right symmetry are shown.This tendency is the same even when the element structure is changed.

Therefore, when the impurity dose is set to two kinds, the impurity doseattaining a maximum in withstand voltage is set to a reference, and twopoints shifted positively and negatively by the same amount andapproximately having an equal withstand voltage are selectivelydetermined. Concretely, for example, in FIG. 18, impurity doses α1, α2of two kinds are shifted positively and negatively by the same amountfrom the impurity dose attaining a maximum in withstand voltage, and areset. Thus, jumping-up of a voltage at an off-state time can be reducedwithout locally reducing the element withstand voltage. Namely, when theelement withstand voltage is merely reduced in accordance with places,there is a possibility that electric current concentration is caused ata breakdown time, and results in an element breakdown. However, theelectric current concentration is avoided and the element breakdown canbe prevented at the breakdown time without concentrating the electriccurrent by selectively determining two points approximately having anequal withstand voltage.

When the impurity dose is set to three kinds or more, the impurity doseis selectively determined from two points shifted positively andnegatively by the same amount, and an area nipped by these two points.Concretely, for example, in FIG. 18, with respect to three kinds ofimpurity doses α1, α2, α3, impurity doses α1, α2 are shifted positivelyand negatively by the same amount from the impurity dose attaining amaximum in withstand voltage, and are set. Impurity dose α3 is set in anarea nipped by impurity doses α1, α2. Impurity dose α3 is preferablycentrally set in the area nipped by impurity doses α1, α2. Similarly, inFIG. 18, with respect to four kinds of impurity doses β1, β2, β3, β4,impurity doses β1, β2 are shifted positively and negatively by the sameamount from the impurity dose attaining a maximum in withstand voltage,and are set. Impurity doses β3, β4 are set in an area nipped by impuritydoses β1, β2. Impurity doses β3, β4 are preferably set so as to becomeimpurity doses trisected in the area nipped by impurity doses β1, β2.Similarly, in FIG. 18, with respect to five kinds of impurity doses α1,α2, α3, α4, α5, impurity doses α1, α2 are positively and negativelyshifted by the same amount from the impurity dose attaining a maximum inwithstand voltage, and are set. Impurity doses α3, α4, α5 are set in anarea nipped by impurity doses α1, α2. Impurity doses α3, α4, α5 arepreferably set so as to become impurity doses quartered in the areanipped by impurity doses α1, α2.

The three kinds or more also include a kind continuously changed.

As mentioned above, in each embodiment mode described so far, it ispossible to prevent the element withstand voltage from being locallyreduced when the impurity dose is set to two kinds so as to ununiformthe impurity dose in accordance with places, and impurity doses havingan equal shift amount are set on a high impurity dose side and a lowimpurity dose side with respect to the impurity dose attaining a maximumin withstand voltage. Further, in each embodiment mode described so far,it is possible to prevent the element withstand voltage from beinglocally reduced when the impurity dose is set to three kinds or more soas to ununiform the impurity dose in accordance with places, andimpurity doses having an equal shift amount are set on the high impuritydose side and the low impurity dose side with respect to the impuritydose attaining a maximum in withstand voltage, and the remainingimpurity doses are set in an area nipped therebetween.

Fifth Embodiment Mode

A fifth embodiment mode for embodying the present invention will next beexplained in accordance with the drawings.

FIG. 24 is a longitudinal sectional view of a semiconductor device inthis embodiment mode. This semiconductor device is a vertical typeMOSFET, and an electric current is flowed in a longitudinal direction.Namely, the longitudinal direction is a flowing direction of theelectric current, and the transversal direction is a directionperpendicular to the flowing direction of the electric current.

FIG. 25 is a transversal sectional view on line XXV-XXV of FIG. 24, andshows the structure of a cross section in a super junction structureportion.

In FIG. 24, a silicon layer 2 is formed on an N⁺ silicon substrate 1,and an N type silicon layer 3 is formed on the silicon layer 2. Asemiconductor substrate is constructed by this laminating layerstructural body. In the silicon layer 2 in the semiconductor substrate,an impurity area (N column) 4 of N type extending in the longitudinaldirection, and an impurity area (P column) 5 of P type similarlyextending in the longitudinal direction are arranged adjacently andalternately in the transversal direction. A column pair (PN column pair)is constructed from the impurity area 4 of N type and the impurity area5 of P type. Thus, a super junction structure is formed. At an on-statetime, the N type impurity area 4 in the PN column pair becomes a driftlayer and the electric current is flowed. At an off-state time, adepletion layer is spread from an interface of the N type impurity area4 and the P type impurity area 5.

In the above N type silicon layer 3, a channel forming area 6 of P typeis formed so as to reach the impurity area 5 of P type. An N type sourcearea 7 is formed in a surface layer portion within the channel formingarea 6 of P type. In a part for exposing the channel forming area 6 of Ptype on an upper face of the N type silicon layer 3, a gate electrode 9is formed through a gate oxide film 8 as a gate insulating film. Thegate electrode 9 is covered with a silicon oxide film 10. A sourceelectrode 11 is formed on the upper face of the N type silicon layer 3.This source electrode 11 is electrically connected to the source area 7and the channel forming area 6. A drain electrode 12 is formed on alower face (rear face) of the N⁺ silicon substrate 1.

The transistor is turned on by applying a positive electric potential tothe gate electrode 9 in a state in which the source electrode 11 is setto a ground electric potential and a positive electric potential isapplied to the drain electrode 12. At a transistor on-state time, asshown in FIG. 24, the electric current is flowed from the drainelectrode 12 to the source electrode 11 through the N⁺ silicon substrate1, the N type impurity area 4, an N type area (3), a part (invertinglayer) opposed to the gate electrode 9 in the channel forming area 6,and the source area 7.

On the other hand, the transistor is turned off when the gate electrode9 is set to a ground electric potential from the transistor on-state (astate in which the source electrode 11 is set to a ground electricpotential and the drain electrode 12 is set to a positive electricpotential and the gate electrode 9 is set to a positive electricpotential). The depletion layer is spread from the interface of the Ntype impurity area 4 and the P type impurity area 5.

Here, in this embodiment mode, as shown in FIG. 25, an impurity area (Ncolumn) 4 of N type and an impurity area (P column) 5 of P typeconstituting a column pair in an active area of the transistor areformed in a band shape as a cross sectional shape, and are alternatelyarranged in parallel in the same direction (direction Y). Further, Ntype impurity areas (N column) 4 adjacent to each other are bridged.

Namely, with respect to the adjacent impurity areas (N column) 4 of Ntype, a bridge portion 213 of a constant width is formed at apredetermined interval. More particularly, the bridge portion 213 isregularly arranged within a chip, i.e., in plane X-Y of FIG. 25.Further, the width Wb of the bridge portion 213 is set to the width Waof the impurity area 5 nipped between the bridged impurity areas 4 orless (Wb≦Wa).

Further, plural bridge portions 213 are arranged in an extendingdirection (direction Y) of the impurity area 4 with respect to theadjacent impurity areas 4, and the length L between the bridge portions213 is differently set in accordance with places. Namely, in FIG. 25,the arranging interval of the bridge portion 213 is set to lengths L1,L2, L3 (L1<L2<L3). Thus, the impurity dose (the total amount ofimpurities of areas 4, 5) in the transversal direction of the PN columnpair is periodically changed.

When no bridge portion 213 is arranged (when no adjacent N type impurityareas 4 are bridged), as shown in FIG. 27A, depletion formation isadvanced in the column pair at a switching time (switching-off time)from an on-state of the transistor to an off-state. As shown in FIG.27B, the depletion formation is simultaneously completed in the columnpair (the depletion formation is instantly performed). In thisoperation, as shown in FIG. 23, at the switching time from an on-stateto an off-state, a changing ratio (dl/dt) with respect to an electriccurrent Ids between a drain and a source is large, and jumping-up of avoltage Vds between the drain and the source is generated.

In contrast to this, in this embodiment mode, the bridge portion 213 isarranged (the adjacent N type impurity areas 4 are bridged), and thedepletion formation is advanced in the column pair as shown in FIG. 26Aat the switching time (switching-off time) from an on-state of thetransistor to an off-state. As shown in FIG. 26B, no depletion formationis simultaneously completed in the column pair. In an area S shown byhatching in the bridge portion 213, no depletion formation is completedwhen the depletion formation is completed in other areas (timing ofperfect depletion formation is intentionally shifted within the chip).Thus, at the switching time (switching-off time) from an on-state of thetransistor to an off-state, the timing for perfectly depleting the PNcolumn pair can be controlled within a transistor face. Therefore, asshown in FIG. 3, the changing ratio (dl/dt) with respect to the electriccurrent Ids between the drain and the source is reduced, and thejumping-up of the voltage Vds between the drain and the source at theswitching time from an on-state to an off-state can be deterred.

Namely, the impurity dose of the PN column pair is unbalanced in thebridge portion 213 and its circumference by forming the bridge portion213, and the timing of the depletion formation is different. It isprevented that the perfect depletion formation is instantly performedwithin an element face. Further, noise generation at the switching timecan be deterred, and recovery characteristics and a breakdown robustnessamount of a built-in diode can be improved.

A manufacturing method of the semiconductor substrate having this superjunction structure will next be explained.

As shown in FIG. 28, an N type silicon wafer 20 as an N typesemiconductor substrate is prepared. As shown in FIG. 29, a trench 22 ofa constant groove width Wa is formed in the same direction (direction Yof FIG. 25) at a constant remaining width Ws by performing etching (dryetching or wet etching) using a mask 21 within a wafer face with respectto the wafer 20. When the trench is formed, the trench is formed so asto have the length of a transistor area or more in a depth direction(direction Y of FIG. 25).

In this embodiment mode, as shown in FIG. 30, in a forming process ofthe trench 22, the trench 22 is arranged in parallel to beintermittently extended, and the bridge portion 213, i.e., an area fordigging no trench is partially arranged within the transistor area. Thewidth Wb of the bridge portion 213 is set to the relation of Wb≦Wa withrespect to the width Wa of the trench so as not to greatly reduce adevice withstand voltage. Namely, when the trench 22 intermittentlyextended is formed, the width Wb of a part (bridge portion 213)interrupted with respect to the trench is set to the width Wa of thetrench 22 or less.

Further, when the trench 22 intermittently extended is formed, i.e.,when the trench 22 as the P type impurity area 5 in FIG. 25 is formed,the length L of a part continued with respect to the trench among thepart (bridge portion 213) interrupted with respect to the trench and thepart continued with respect to the trench is differently set inaccordance with places.

Thereafter, as shown in FIG. 31, an epitaxial film 23 of P type isformed on the N type silicon wafer 20, and the trench 22 is buried bythe epitaxial film 23. Thereafter, a main face side (upper face side) ofthe N type silicon wafer 20, i.e., an upper face side of the epitaxialfilm 23 is polished and flattened. This polishing is performed until thesilicon wafer 20 is exposed. The upper face side of the epitaxial film23 may be also flattened by etch back instead of the polishing. Further,if epitaxial growth is controlled so as to flatten the upper face of theepitaxial film 23, flattening processing after epitaxy can be set to beunnecessary.

Further, as shown in FIG. 32, an N type epitaxial film 24 is formed onthe upper face of the N type silicon wafer 20. A surface silicon layerof N type may be also formed by implanting ions on the upper face of theN type silicon wafer 20 instead of the formation of the N type epitaxialfilm 24 on the upper face of the N type silicon wafer 20.

Further, the rear face (lower face) of the N type silicon wafer 20 ispolished until the vicinity of the trench 22, and an N⁺ siliconsubstrate is stuck to this polishing face. An N⁺ silicon layer may bealso formed on the rear face of the N type silicon wafer 20 byimplanting ions from the rear face (lower face) of the N type siliconwafer 20 instead of the polishing of the rear face of the N type siliconwafer 20 and the sticking of the N⁺ silicon substrate.

The vertical type MOSFET shown in FIG. 24 is manufactured by using thesemiconductor substrate (the semiconductor substrate having the superjunction structure) formed in this way. Namely, a P type channel formingarea 6, an N type source area 7, a gate oxide film 8, a gate electrode9, a silicon oxide film 10, a source electrode 11 and a drain electrode12 are formed. Thus, the super junction MOSFET of FIG. 24 is completed.

Here, a trench forming process and a burying process using epitaxy ofthe trench in the above manufacturing process will be referred.

In FIG. 34, in a device of middle and high withstand voltages (e.g., 200to 300 volts or more), an aspect ratio (H/W) of a wall portion 100becomes large. For example, the aspect ratio is “5” to “10” at awithstand voltage of 600 volts, and is “5” to “10” or more at awithstand voltage exceeding 1000 Volts. With respect to the length (L)of the trench, the trench is formed so as to be longer than a transistorarea. Therefore, in the case of a power device for treating a largeelectric current, this length ranges from about 1 mm to ten and severalmm. Therefore, there is a possibility that the trench wall 100 isinclined and falls at a wafer conveying time and a cleaning time beforetrench burying. Moreover, it is impossible to form a long trenchreaching the diameter of the wafer since the fear of the inclination andfalling of the trench wall is raised. Therefore, trench formationconformed to a chip size is compelled.

In this embodiment mode, the trench 22 is buried by epitaxial growthafter the trench 22 of a stripe shape is formed. However, when thetrench 22 of a stripe shape is formed, as shown in FIG. 30, it ispossible to avoid that the trench wall 223 is inclined and falls beforethe trench burying by partially arranging the bridge portion (an areafor digging no trench) 213 within the transistor area. Thus, it ispossible to make the PN column pair of the same design in an entire areawithin the wafer face, and form the substrate trench not depending onthe chip size.

In accordance with the above embodiment mode, the following effects canbe obtained.

(1) In the semiconductor device (vertical type MOSFET) having the superjunction structure, the impurity area (N column) 4 of N type and theimpurity area (P column) 5 of P type constituting the column pair in theactive area of the semiconductor device are formed in a band shape as ashape on a face perpendicular to the flowing direction of an electriccurrent as shown in FIG. 25, and are alternately arranged in parallel inthe same direction. The adjacent N type impurity areas (N column) 4 arebridged. Accordingly, as shown in FIGS. 26A and 26B, timing forperfectly depleting the column pair (PN column pair) constructed by theimpurity area (N column) 4 of N type and the impurity area (P column) 5of P type is shifted at the switching time (switching-off time) from anon-state to an off-state in the bridge portion 213 of the impurity area(N column) 4 of N type and its circumference on the face perpendicularto the flowing direction of the electric current. Thus, jumping-up ofthe voltage at the switching time from an on-state to an off-state canbe restrained.

(2) A first process and a second process are included as themanufacturing method of the semiconductor substrate having the superjunction structure. As shown in FIGS. 29 and 30, in the first process,the trench 22 of a constant groove width Wa is arranged in parallel byetching in the silicon wafer 20 of N type so as to be intermittentlyextended in the same direction at a constant remaining width Ws. Asshown in FIG. 31, in the second process, the epitaxial film 23 of P typeis formed on the silicon wafer 20 of N type, and the trench 22 is buriedby this epitaxial film 23. Accordingly, the substrate for thesemiconductor device of the above (1) can be easily obtained. Further,in manufacture, the aspect ratio of a wall portion after the trenchformation becomes large, and a wall is easily inclined and easily fallsbefore the burying using epitaxial growth. However, in this embodimentmode, the trench 22 of the constant groove width Wa is arranged inparallel so as to be intermittently extended in the same direction atthe constant remaining width Ws. Accordingly, it is possible to preventthat the trench wall is inclined and falls. Thus, the PN column pair ofthe same design can be made in the entire area within the wafer face,and the substrate trench not depending on the chip size can be formed.

(3) In particular, in (1), as shown in FIG. 25, the width Wb of thebridge portion 213 is set to the width Wa of the P type impurity area 5nipped between the bridged N type impurity areas 4 or less. Accordingly,an area shown by reference numeral S in FIG. 26B is reduced and a greatreduction in the withstand voltage of the device can be prevented.Therefore, it is sufficient to set the width Wb of a part (bridgeportion 213) interrupted with respect to the trench to the width Wa ofthe trench 22 or less in forming the trench 22 intermittently extendedin the above first process.

Further, as shown in FIG. 25, plural bridge portions 213 are arranged inan extending direction of the N type impurity area 4 with respect to theadjacent N type impurity areas 4, and the length L between the bridgeportions 213 is differently set in accordance with places. Accordingly,the bridge portion 213 can be arranged by periodically changing thelength between the bridge portions, and can be also irregularly arrangedon a face perpendicular to the flowing direction of an electric current.Thus, optimization in shifting depletion formation timing (depletionformation timing is gradually shifted, etc.) can be performed within theactive area, and a larger effect is obtained. Therefore, when the trench22 intermittently extended is formed in the above first process, it issufficient to differently set the length L of a part continued withrespect to the trench among a part (bridge portion 213) interrupted withrespect to the trench and the part continued with respect to the trenchin accordance with places.

Sixth Embodiment Mode

A sixth embodiment mode will next be explained with a focus on adifferent point from the fifth embodiment mode.

This embodiment mode is set to a construction shown in FIG. 33 insteadof FIG. 25.

In FIG. 33, the bridge portion 213 is periodically arranged as a formingposition of the bridge portion 213, and the width Wb of the bridgeportion 213 is set so as to be sequentially increased in the order ofWb1, Wb2, Wb3 (Wb1<Wb2<Wb3).

Namely, plural bridge portions 213 are arranged in the extendingdirection (direction Y) of the N type impurity area 4 with respect tothe adjacent N type impurity areas 4, and the width Wb of the bridgeportion 213 is differently set in accordance with places. Therefore,when the trench 22 intermittently extended is formed in the above firstprocess, the width Wb of a part (bridge portion 213) interrupted withrespect to the trench among the part (bridge portion 213) interruptedwith respect to the trench and a part continued with respect to thetrench is differently set in accordance with places. Thus, timing forperforming perfect depletion formation in each bridge portion in a crosssection (a face perpendicular to the flowing direction of an electriccurrent) can be shifted. Thus, optimization in shifting the timing fordepleting the adjacent bridge portion (the timing for depleting theadjacent bridge portion is gradually shifted, etc.) can be performed,and a larger effect is obtained.

With respect to the bridged N type impurity area 4, as explained in thefifth embodiment mode, plural bridge portions 213 may be arranged in theextending direction of the impurity area 4 with respect to the adjacentimpurity areas 4, and the length L between the bridge portions 213 maybe also differently set in accordance with places. Further, as explainedin the sixth embodiment mode, the width Wb of the bridge portion 213 maybe also differently set in accordance with places. Thus, a more detaileddesign can be made.

The above embodiment mode may be also set as follows.

In FIG. 25, etc., the adjacent N type impurity areas (N column) 4 arebridged, but adjacent P type impurity areas (N column) 5 may be alsobridged.

In the explanation made so far, the first electric conductivity type isthe N type, and the second electric conductivity type is the P type.However, conversely, the first electric conductivity type may be alsothe P type and the second electric conductivity type may be also the Ntype. Namely, in FIG. 24, the P column of the column pair may be alsoset to a drift area as the P channel MOSFET.

Further, MOSFET of the planar type has been explained as an example, butsimilar effects are also obtained in a concave type and a trench type.

Further, the above embodiments may be also applied to IGBT and a diodein addition to MOSFET.

The above disclosure has the following aspects.

According to a first aspect of the present disclosure, a semiconductordevice having a super junction structure includes: a plurality of firstcolumns having a first conductive type and extending in a currentflowing direction; and a plurality of second columns having a secondconductive type and extending in the current flowing direction. Thefirst columns and the second columns are alternately arranged in analternating direction perpendicular to the current flowing direction sothat the super junction structure is provided. Each first columnprovides a drift layer in case of an on-state for flowing a currenttherethrough. The first columns and the second columns have a boundarybetween the first column and the second column, from which a depletionlayer expands in case of an off-state. At least one of the first columnsand the second columns have an impurity dose, which is inhomogeneous bylocation with respect to the alternating direction.

When the device switches from the on-state to the off-state, a timing ofcomplete depleting the first and second columns deviates by locationwith respect to the alternating direction. Thus, voltage jump is reducedwhen the device switches to the off-state.

Alternatively, each first column may have a first impurityconcentration, and each second column may have a second impurityconcentration. At least one of the first impurity concentration and thesecond impurity concentration varies by location with respect to thealternating direction.

Alternatively, each first column may have a first width in thealternating direction, and each second column may have a second width inthe alternative direction. At least one of the first width and thesecond width varies by location with respect to the alternatingdirection.

Alternatively, each first column may have a first width in thealternating direction, and the first width is constant by location withrespect to the alternating direction. Each second column may have asecond width in the alternative direction, and the second width isconstant by location with respect to the alternating direction. Eachfirst column may have a first impurity concentration, and each secondcolumn may have a second impurity concentration. The first impurityconcentration and the second impurity concentration vary by locationwith respect to the alternating direction.

Alternatively, each first column may have a first width in thealternating direction, and the first width is constant by location withrespect to the alternating direction. Each second column may have asecond width in the alternative direction, and the second width isconstant by location with respect to the alternating direction. Eachfirst column may have a first impurity concentration, and each secondcolumn may have a second impurity concentration. The first impurityconcentration varies by location with respect to the alternatingdirection, and the second impurity concentration is constant by locationwith respect to the alternating direction.

Alternatively, each first column may have a first impurityconcentration, and the first impurity concentration is constant bylocation with respect to the alternating direction. Each second columnmay have a second impurity concentration, and the second impurityconcentration is constant by location with respect to the alternatingdirection. Each first column may have a first width in the alternatingdirection, and each second column may have a second width in thealternative direction. The first width varies by location with respectto the alternating direction, and the second width is constant bylocation with respect to the alternating direction.

Alternatively, at least one of the impurity doses of the first columnsand the second columns may include a first dose and a second dose. Thedevice has a maximum breakdown voltage when the one of the impuritydoses is a predetermined optimum impurity dose. The first dose is higherthan the optimum impurity dose by a predetermined value. The surfacesecond density is lower than the optimum impurity dose by thepredetermined value. In this case, the breakdown voltage of the deviceis improved, i.e., the breakdown voltage of the device is prevented frombeing locally reduced.

Alternatively, at least one of the impurity doses of the first columnsand the second columns may include a first dose, at least one middledose and a second dose. The device has a maximum breakdown voltage whenthe one of the impurity doses is a predetermined optimum impurity dose.The first dose is higher than the optimum impurity dose by apredetermined value. The surface second density is lower than theoptimum impurity dose by the predetermined value. The middle dose isdisposed in a region between the first dose and the second dose.

Alternatively, the device may be a vertical type MOSFET or a lateraltype MOSFET.

According to a second aspect of the present disclosure, a semiconductordevice having a super junction structure includes: a plurality of firstcolumns having a first conductive type and extending in a currentflowing direction; and a plurality of second columns having a secondconductive type and extending in the current flowing direction. Thefirst columns and the second columns are alternately arranged in analternating direction perpendicular to the current flowing direction sothat the super junction structure is provided. Each first columnprovides a drift layer in case of an on-state for flowing a currenttherein. The first columns and the second columns have a boundarybetween the first column and the second column, from which a depletionlayer expands in case of an off-state. At least one of the first columnsand the second columns have an impurity dose, which is inhomogeneous bylocation with respect to the current flowing direction.

When the device switches from the on-state to the off-state, a timing ofcomplete depleting the first and second columns deviates by locationwith respect to the current flowing direction. Thus, voltage jump isreduced when the device switches to the off-state.

Alternatively, each first column may have a first impurityconcentration, and the first impurity concentration is constant bylocation with respect to the alternating direction. Each second columnmay have a second impurity concentration, and the second impurityconcentration is constant by location with respect to the alternatingdirection. Each first column may have a first width in the alternatingdirection, and each second column may have a second width in thealternative direction. The first width and the second width vary bylocation with respect to the current flowing direction.

According to a third aspect of the present disclosure, a method formanufacturing a semiconductor device having a super junction structureincludes: preparing a semiconductor substrate having a first conductivetype; forming a plurality of trenches in the substrate, wherein eachtrench has a constant width along with a first direction, and wherein adistance between neighboring two trenches along with the first directionincludes at least a first distance and a second distance; forming anepitaxial film having a second conductive type on the substrate so thatthe trenches are filled with the epitaxial film; and flattening one sideof the substrate, on which the epitaxial film is formed.

The above method provides the semiconductor device, in which voltagejump is reduced when the device switches to the off-state.

According to a fourth aspect of the present disclosure, a semiconductordevice having a super junction structure includes: a plurality of firstcolumns having a first conductive type and extending in a currentflowing direction; and a plurality of second columns having a secondconductive type and extending in the current flowing direction. Thefirst columns and the second columns are alternately arranged in analternating direction perpendicular to the current flowing direction sothat the super junction structure is provided. Each first columnprovides a drift layer in case of an on-state for flowing a currenttherethrough. The first columns and the second columns have a boundarybetween the first column and the second column, from which a depletionlayer expands in case of an off-state. Each of the first columns and thesecond columns have a stripe planar pattern on a plane perpendicular tothe current flowing direction. At least one of the first columns and thesecond columns have a bridge portion, which connects one first or secondcolumn and a neighboring first or second column.

When the device switches from the on-state to the off-state, a timing ofcomplete depleting the first and second columns deviates by location.Thus, voltage jump is reduced when the device switches to the off-state.

Alternatively, the other one of the first columns and the second columnsmay have a width along with the alternating direction. The bridgeportion has a width along with an extending direction of the stripeplanar pattern, which is perpendicular to the alternating direction, andthe width of the bridge portion is smaller than the width of the otherone of the first columns and the second columns. In this case, thebreakdown voltage of the device is improved.

Alternatively, the bridge portion may include a plurality of bridgeelements. The bridge elements have a distance between one bridge elementand a neighboring bridge element along with an extending direction ofthe stripe planar pattern, which is perpendicular to the alternatingdirection, and the distance of the bridge elements varies by location.In this case, the bridge elements may be periodically arranged orrandomly arranged, so that the timing of complete depleting the firstand second columns is optimized. Thus, voltage jump is effectivelyreduced when the device switches to the off-state.

Alternatively, the bridge portion may include a plurality of bridgeelements. Each bridge element has a width along with an extendingdirection of the stripe planar pattern, which is perpendicular to thealternating direction, and the width of the bridge elements varies bylocation.

According to a fifth aspect of the present disclosure, a method formanufacturing a semiconductor device having a super junction structureincludes: preparing a semiconductor substrate having a first conductivetype; forming a plurality of trenches in the substrate, wherein eachtrench has a constant width along with a first direction, wherein thetrenches have a constant distance between neighboring two trenches alongwith the first direction, and wherein each trench extends intermittentlyin a second direction, which is perpendicular to the first direction;and forming an epitaxial film having a second conductive type on thesubstrate so that the trenches are filled with the epitaxial film.

The above method provides the semiconductor device, in which voltagejump is reduced when the device switches to the off-state. Further,since the trenches have the constant distance between neighboring twotrenches, and each trench extends intermittently in the seconddirection, a trench wall is prevented from inclining.

Alternatively, the trenches may have a break portion, at which extendingof the trenches stops. The break portion has a width along with thesecond direction, and the width of the break portion is smaller than theconstant width of the trenches.

Alternatively, the trenches may have a plurality of break portions, atwhich extending of the trenches stops. The break portions have adistance between one break portion and a neighboring break portion alongwith the second direction, and the distance of the break portions variesby location.

Alternatively, the trenches may have a plurality of break portions, atwhich extending of the trenches stops. Each break portion has a widthalong with the second direction, and the width of the break portionsvaries by location.

While the invention has been described with reference to preferredembodiments thereof, it is to be understood that the invention is notlimited to the preferred embodiments and constructions. The invention isintended to cover various modification and equivalent arrangements. Inaddition, while the various combinations and configurations, which arepreferred, other combinations and configurations, including more, lessor only a single element, are also within the spirit and scope of theinvention.

1-14. (canceled)
 15. A method for manufacturing a semiconductor devicehaving a super junction structure, the method comprising: preparing asemiconductor substrate having a first conductive type; forming aplurality of trenches in the substrate, wherein each trench has aconstant width along with a first direction, and wherein a distancebetween neighboring two trenches along with the first direction includesat least a first distance and a second distance; forming an epitaxialfilm having a second conductive type on the substrate so that thetrenches are filled with the epitaxial film; and flattening one side ofthe substrate, on which the epitaxial film is formed. 16-24. (canceled)